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Light-Emitting-Diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range
Cita
Bengoechea Encabo, Ana, Albert, Steven, López-Romero Moraleda, David, Lefebvre, P., Barbagini, Francesca, Torres Pardo, Almudena, González Calbet, José María, Sánchez García, Miguel Angel 
ORCID: https://orcid.org/0000-0002-1494-9351 and Calleja Pardo, Enrique ORCID: https://orcid.org/0000-0002-3686-8982
(2014).
Light-Emitting-Diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range.
"Nanotechnology", v. 25
(n. 43);
pp..
ISSN 0957-4484.
https://doi.org/10.1088/0957-4484/25/43/435203.
ORCID: https://orcid.org/0000-0002-1494-9351 and Calleja Pardo, Enrique ORCID: https://orcid.org/0000-0002-3686-8982
(2014).
Light-Emitting-Diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range.
"Nanotechnology", v. 25
(n. 43);
pp..
ISSN 0957-4484.
https://doi.org/10.1088/0957-4484/25/43/435203.
Descripción
| Título: | Light-Emitting-Diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range |
|---|---|
| Autor/es: |
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| Tipo de Documento: | Artículo |
| Título de Revista/Publicación: | Nanotechnology |
| Fecha: | Octubre 2014 |
| ISSN: | 0957-4484 |
| Volumen: | 25 |
| Número: | 43 |
| Materias: | |
| ODS: | |
| Palabras Clave Informales: | InGaN, nanocolumns, LED, SAG |
| Escuela: | E.T.S.I. Telecomunicación (UPM) |
| Departamento: | Ingeniería Electrónica |
| Licencias Creative Commons: | Reconocimiento - Sin obra derivada - No comercial |
Resumen
The growth of ordered arrays of InGaN/GaN nanocolumnar light emitting diodes by molecular beam epitaxy, emitting in the blue (441 nm), green (502 nm), and yellow (568 nm) spectral range is reported. The device active region, consisting of a nanocolumnar InGaN section of nominally constant composition and 250 to 500 nm length, is free of extended defects, which is in strong contrast to InGaN layers (planar) of similar composition and thickness. The devices are driven under pulsed operation up to 1300 A/cm2 without traces of efficiency droop. Electroluminescence spectra show a very small blue shift with increasing current, (almost negligible in the yellow device) and line widths slightly broader than those of state-of-the-art InGaN quantum wells.
Proyectos asociados
Tipo
Código
Acrónimo
Responsable
Título
FP7
280694
GECCO
TECHNISCHE UNIVERSITAET BRAUNSCHWEIG
3D GaN for High Efficiency Solid State Lighting
Gobierno de España
MAT2011-26703
Sin especificar
Universidad Politécnica de Madrid
CELULAS SOLARES DE INGAN MEJORADAS
CON PLASMONES SUPERFICIALES Y FABRICADAS POR MBE SOBRE SUSTRATOS DE SILICIO Y CAPAS DE GAN
Más información
| ID de Registro: | 35715 |
|---|---|
| Identificador DC: | https://oa.upm.es/35715/ |
| Identificador OAI: | oai:oa.upm.es:35715 |
| URL Portal Científico: | https://portalcientifico.upm.es/es/ipublic/item/5490606 |
| Identificador DOI: | 10.1088/0957-4484/25/43/435203 |
| URL Oficial: | http://iopscience.iop.org/0957-4484/25/43/435203/a... |
| Depositado por: | Memoria Investigacion |
| Depositado el: | 22 Jun 2015 16:47 |
| Ultima Modificación: | 12 Nov 2025 00:00 |
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