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Effect of field damping layer on two step absorption of quantum dots solar cells
Cita
Shoji, Y., Tamaki, R., Datas Medina, Alejandro 
ORCID: https://orcid.org/0000-0001-5964-3818, Martí Vega, Antonio ORCID: https://orcid.org/0000-0002-8841-7091, Luque López, Antonio ORCID: https://orcid.org/0000-0002-8357-6413 and Okada, Y.
(2014).
Effect of field damping layer on two step absorption of quantum dots solar cells.
En: "6th World Conference on Photovoltaic Energy Conversion (WCPEC-6)", 23/11/2014 - 27/11/2014, Kyoto, Japan. pp. 123-124.
ORCID: https://orcid.org/0000-0001-5964-3818, Martí Vega, Antonio ORCID: https://orcid.org/0000-0002-8841-7091, Luque López, Antonio ORCID: https://orcid.org/0000-0002-8357-6413 and Okada, Y.
(2014).
Effect of field damping layer on two step absorption of quantum dots solar cells.
En: "6th World Conference on Photovoltaic Energy Conversion (WCPEC-6)", 23/11/2014 - 27/11/2014, Kyoto, Japan. pp. 123-124.
Descripción
| Título: | Effect of field damping layer on two step absorption of quantum dots solar cells |
|---|---|
| Autor/es: |
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| Tipo de Documento: | Ponencia en Congreso o Jornada (Artículo) |
| Título del Evento: | 6th World Conference on Photovoltaic Energy Conversion (WCPEC-6) |
| Fechas del Evento: | 23/11/2014 - 27/11/2014 |
| Lugar del Evento: | Kyoto, Japan |
| Título del Libro: | 6th World Conference on Photovoltaic Energy Conversion (WCPEC-6) |
| Fecha: | 2014 |
| Materias: | |
| ODS: | |
| Escuela: | E.T.S.I. Telecomunicación (UPM) |
| Departamento: | Electrónica Física |
| Licencias Creative Commons: | Reconocimiento - Sin obra derivada - No comercial |
Resumen
Multi-stacked InAs/AlGaAs quantum dot solar cells (QDSCs) introduced with field damping layers (FDL) which sustain the junction built-in potential have been studied. Without an external bias condition, the external quantum efficiency (EQE) of QD layers are reduced by introducing the thick FDL, because the carrier escape due to built-in electric field was suppressed. On the other hand, the photocurrent production due to two-step absorption is increased by the formation of flat-band QD structure for QDSC with thick FDL.
Más información
| ID de Registro: | 36452 |
|---|---|
| Identificador DC: | https://oa.upm.es/36452/ |
| Identificador OAI: | oai:oa.upm.es:36452 |
| Depositado por: | Memoria Investigacion |
| Depositado el: | 04 Ago 2015 15:54 |
| Ultima Modificación: | 06 Jun 2016 23:56 |
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