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Clement Lorenzo, Marta ORCID: https://orcid.org/0000-0003-4956-8206, Olivares Roza, Jimena
ORCID: https://orcid.org/0000-0003-4396-4363, Iborra Grau, Enrique
ORCID: https://orcid.org/0000-0002-1385-1379, González Castilla, Sheila, Sangrador García, Jesús
ORCID: https://orcid.org/0000-0001-9582-8692, Rimmer, Nick, Rastogi, A., Ivira, B. and Reinhardt, Alexandre
(2008).
Aluminium Nitride Solidly Mounted BAW Resonators with Iridium Electrodes.
In: "22nd European Frequency and Time Forum (EFTF) 2008", 22/04/2008-25/04/2008, Toulouse, Francia.
Title: | Aluminium Nitride Solidly Mounted BAW Resonators with Iridium Electrodes |
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Author/s: |
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Item Type: | Presentation at Congress or Conference (Article) |
Event Title: | 22nd European Frequency and Time Forum (EFTF) 2008 |
Event Dates: | 22/04/2008-25/04/2008 |
Event Location: | Toulouse, Francia |
Title of Book: | Proceedings of 22nd European Frequency and Time Forum (EFTF) 2008 |
Date: | 22 April 2008 |
Subjects: | |
Faculty: | E.T.S.I. Telecomunicación (UPM) |
Department: | Tecnología Electrónica [hasta 2014] |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
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In this work we investigated the performance of aluminium nitride (AlN)-based solidly mounted resonators (SMR) made with iridium (Ir) bottom electrodes. Ir/AlN/metal stacks were grown on top of insulating Bragg mirrors composed of alternate λ/4 layers of silicon oxi-carbide (SiOC) and silicon nitride (Si3N4).Ir electrodes of various thicknesses were electron-beam evaporated on different adhesion layers, which also acted as seed layers. AlN was deposited by sputtering after conditioning the Ir electrode by a soft-etch with Ar+ ions, which was essential to achieve high quality AlN films. The structure and morphology of the different layers were analysed by x-ray diffraction (XRD) and atomic force microscopy (AFM). The frequency response of the SMRs was assessed by measuring the input scattering parameterS11 with a network analyzer. The experimental results were fitted to the Butterworth-Van Dyke circuital model. The effective electromechanical coupling factor k2eff, and the quality factor Q of the resonators were derived from the experimental data. The influence of the thickness, crystal quality and roughness of the Ir bottom electrodes on the performance of the resonators was investigated.
Item ID: | 3928 |
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DC Identifier: | https://oa.upm.es/3928/ |
OAI Identifier: | oai:oa.upm.es:3928 |
Official URL: | http://www.eftf.org/proceedings/PDFs/FPE-0159.pdf |
Deposited by: | Memoria Investigacion |
Deposited on: | 02 Sep 2010 08:50 |
Last Modified: | 20 Apr 2016 13:20 |