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Llorens Molina, Juan Antonio, Wewior, L., Cardozo de Oliveira, E.R., Ulloa Herrero, José María ORCID: https://orcid.org/0000-0002-5679-372X, Utrilla Lomas, Antonio David, Fernández González, Álvaro de Guzmán
ORCID: https://orcid.org/0000-0001-5386-0360, Hierro Cano, Adrián
ORCID: https://orcid.org/0000-0002-0414-4920 and Alén Millán, Benito
(2015).
Type II InAs/GaAsSb quantum dots: Highly tunable exciton geometry and topology.
"Applied Physics Letters", v. 107
(n. 18);
pp..
ISSN 0003-6951.
https://doi.org/10.1063/1.4934841.
Title: | Type II InAs/GaAsSb quantum dots: Highly tunable exciton geometry and topology |
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Author/s: |
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Item Type: | Article |
Título de Revista/Publicación: | Applied Physics Letters |
Date: | November 2015 |
ISSN: | 0003-6951 |
Volume: | 107 |
Subjects: | |
Faculty: | Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM) |
Department: | Otro |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
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External control over the electron and hole wavefunctions geometry and topology is investigated in a p-i-n diode embedding a dot-in-a-well InAs/GaAsSb quantum structure with type II band alignment. We find highly tunable exciton dipole moments and largely decoupled exciton recombination and ionization dynamics. We also predicted a bias regime where the hole wavefunction topology changes continuously from quantum dot-like to quantum ring-like as a function of the external bias. All these properties have great potential in advanced electro-optical applications and in the investigation of fundamental spin-orbit phenomena.
Item ID: | 40924 |
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DC Identifier: | https://oa.upm.es/40924/ |
OAI Identifier: | oai:oa.upm.es:40924 |
DOI: | 10.1063/1.4934841 |
Official URL: | http://scitation.aip.org/content/aip/journal/apl/1... |
Deposited by: | Memoria Investigacion |
Deposited on: | 07 Sep 2016 16:49 |
Last Modified: | 26 Mar 2023 12:42 |