Full text
|
PDF
- Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (3MB) | Preview |
Espinet González, Pilar and Rey-Stolle Prado, Ignacio and Algora del Valle, Carlos and García Vara, Iván (2015). Analysis of the behavior of multijunction solar cells under high irradiance Gaussian light profiles showing chromatic aberration with emphasis on tunnel junction performance. "Progress in Photovoltaics", v. 23 ; pp. 743-753. ISSN 1062-7995. https://doi.org/10.1002/pip.2491.
Title: | Analysis of the behavior of multijunction solar cells under high irradiance Gaussian light profiles showing chromatic aberration with emphasis on tunnel junction performance |
---|---|
Author/s: |
|
Item Type: | Article |
Título de Revista/Publicación: | Progress in Photovoltaics |
Date: | June 2015 |
ISSN: | 1062-7995 |
Volume: | 23 |
Subjects: | |
Freetext Keywords: | Tunnel junction; CPV; concentration; multijunction; solar cells; simulation; photovoltaics |
Faculty: | E.T.S.I. Telecomunicación (UPM) |
Department: | Electrónica Física |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
|
PDF
- Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (3MB) | Preview |
In this work, we explain the behavior of multijunction solar cells under non-uniform (spatially and in spectral content) light profiles in general and in particular when Gaussian light profiles cause a photo-generated current density, which exceeds locally the peak current density of the tunnel junction. We have analyzed the implications on the tunnel junction's limitation, that is, in the loss of efficiency due to the appearance of a dip in the I–V curve. For that, we have carried out simulations with our three-dimensional distributed model for multijunction solar cells, which contemplates a full description of the tunnel junction and also takes into account the lateral resistances in the tunnel junction. The main findings are that the current density photo-generated spreads out through the lateral resistances of the device, mainly through the tunnel junction layers and the back contact. Therefore, under non-uniform light profiles these resistances are determinant not only to avoid the tunnel junction's limitation but also for mitigating losses in the fill factor. Therefore, taking into account these lateral resistances could be the key for jointly optimizing the concentrator photovoltaic system (concentrator optics, front grid layout and semiconductor structure)
Type | Code | Acronym | Leader | Title |
---|---|---|---|---|
FP7 | 283798 | NGCPV | UNIVERSIDAD POLITECNICA DE MADRID | A new generation of concentrator photovoltaic cells, modules and systems |
Government of Spain | TEC2012-37286 | Unspecified | Unspecified | Unspecified |
Government of Spain | IPT-2011-1408-420000 | Unspecified | Unspecified | Unspecified |
Madrid Regional Government | S2009/ENE1477 | NUMANCIA II | Unspecified | Unspecified |
Government of Spain | TEC2011-28639-C02-01 | Unspecified | Unspecified | Unspecified |
Government of Spain | IPT- 2011-1441-920000 | Unspecified | Unspecified | Unspecified |
Item ID: | 40980 |
---|---|
DC Identifier: | https://oa.upm.es/40980/ |
OAI Identifier: | oai:oa.upm.es:40980 |
DOI: | 10.1002/pip.2491 |
Official URL: | http://onlinelibrary.wiley.com/doi/10.1002/pip.2491/abstract |
Deposited by: | Memoria Investigacion |
Deposited on: | 25 Jun 2016 08:30 |
Last Modified: | 06 Jun 2019 12:51 |