Analysis of the behavior of multijunction solar cells under high irradiance Gaussian light profiles showing chromatic aberration with emphasis on tunnel junction performance

Espinet González, Pilar, Rey-Stolle Prado, Ignacio ORCID: https://orcid.org/0000-0002-4919-5609, Algora del Valle, Carlos ORCID: https://orcid.org/0000-0003-1872-7243 and García Vara, Iván ORCID: https://orcid.org/0000-0002-9895-2020 (2015). Analysis of the behavior of multijunction solar cells under high irradiance Gaussian light profiles showing chromatic aberration with emphasis on tunnel junction performance. "Progress in Photovoltaics", v. 23 ; pp. 743-753. ISSN 1062-7995. https://doi.org/10.1002/pip.2491.

Descripción

Título: Analysis of the behavior of multijunction solar cells under high irradiance Gaussian light profiles showing chromatic aberration with emphasis on tunnel junction performance
Autor/es:
Tipo de Documento: Artículo
Título de Revista/Publicación: Progress in Photovoltaics
Fecha: Junio 2015
ISSN: 1062-7995
Volumen: 23
Materias:
ODS:
Palabras Clave Informales: Tunnel junction; CPV; concentration; multijunction; solar cells; simulation; photovoltaics
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

In this work, we explain the behavior of multijunction solar cells under non-uniform (spatially and in spectral content) light profiles in general and in particular when Gaussian light profiles cause a photo-generated current density, which exceeds locally the peak current density of the tunnel junction. We have analyzed the implications on the tunnel junction's limitation, that is, in the loss of efficiency due to the appearance of a dip in the I–V curve. For that, we have carried out simulations with our three-dimensional distributed model for multijunction solar cells, which contemplates a full description of the tunnel junction and also takes into account the lateral resistances in the tunnel junction. The main findings are that the current density photo-generated spreads out through the lateral resistances of the device, mainly through the tunnel junction layers and the back contact. Therefore, under non-uniform light profiles these resistances are determinant not only to avoid the tunnel junction's limitation but also for mitigating losses in the fill factor. Therefore, taking into account these lateral resistances could be the key for jointly optimizing the concentrator photovoltaic system (concentrator optics, front grid layout and semiconductor structure)

Proyectos asociados

Tipo
Código
Acrónimo
Responsable
Título
FP7
283798
NGCPV
UNIVERSIDAD POLITECNICA DE MADRID
A new generation of concentrator photovoltaic cells, modules and systems
Gobierno de España
TEC2012-37286
Sin especificar
Sin especificar
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Gobierno de España
IPT-2011-1408-420000
Sin especificar
Sin especificar
Sin especificar
Comunidad de Madrid
S2009/ENE1477
NUMANCIA II
Sin especificar
Sin especificar
Gobierno de España
TEC2011-28639-C02-01
Sin especificar
Sin especificar
Sin especificar
Gobierno de España
IPT- 2011-1441-920000
Sin especificar
Sin especificar
Sin especificar

Más información

ID de Registro: 40980
Identificador DC: https://oa.upm.es/40980/
Identificador OAI: oai:oa.upm.es:40980
URL Portal Científico: https://portalcientifico.upm.es/es/ipublic/item/3110671
Identificador DOI: 10.1002/pip.2491
URL Oficial: http://onlinelibrary.wiley.com/doi/10.1002/pip.249...
Depositado por: Memoria Investigacion
Depositado el: 25 Jun 2016 08:30
Ultima Modificación: 12 Nov 2025 00:00