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Degradation of subcells and tunnel junctions during growth of GaInP/Ga(In)As/GaNAsSb/Ge 4-junction solar cells
Cita
García Vara, Iván 
ORCID: https://orcid.org/0000-0002-9895-2020, Ochoa Gómez, Mario ORCID: https://orcid.org/0000-0002-7108-3638, Lombardero, Iván, Cifuentes, Luis, Hinojosa, Manuel, Caño, Pablo, Rey-Stolle Prado, Ignacio ORCID: https://orcid.org/0000-0002-4919-5609, Algora del Valle, Carlos ORCID: https://orcid.org/0000-0003-1872-7243, Johnson, A.D., Davies, J.I., Tan, K.H., Loke, W.K., Wicaksono, S. and Yoon, F.
(2017).
Degradation of subcells and tunnel junctions during growth of GaInP/Ga(In)As/GaNAsSb/Ge 4-junction solar cells.
"Progress in Photovoltaics: Research and Applications", v. N/A
(n. N/A);
pp. 1-9.
ISSN 1099-159X.
https://doi.org/10.1002/pip.2930.
ORCID: https://orcid.org/0000-0002-9895-2020, Ochoa Gómez, Mario ORCID: https://orcid.org/0000-0002-7108-3638, Lombardero, Iván, Cifuentes, Luis, Hinojosa, Manuel, Caño, Pablo, Rey-Stolle Prado, Ignacio ORCID: https://orcid.org/0000-0002-4919-5609, Algora del Valle, Carlos ORCID: https://orcid.org/0000-0003-1872-7243, Johnson, A.D., Davies, J.I., Tan, K.H., Loke, W.K., Wicaksono, S. and Yoon, F.
(2017).
Degradation of subcells and tunnel junctions during growth of GaInP/Ga(In)As/GaNAsSb/Ge 4-junction solar cells.
"Progress in Photovoltaics: Research and Applications", v. N/A
(n. N/A);
pp. 1-9.
ISSN 1099-159X.
https://doi.org/10.1002/pip.2930.
Descripción
| Título: | Degradation of subcells and tunnel junctions during growth of GaInP/Ga(In)As/GaNAsSb/Ge 4-junction solar cells |
|---|---|
| Autor/es: |
|
| Tipo de Documento: | Artículo |
| Título de Revista/Publicación: | Progress in Photovoltaics: Research and Applications |
| Fecha: | Septiembre 2017 |
| ISSN: | 1099-159X |
| Volumen: | N/A |
| Número: | N/A |
| Materias: | |
| ODS: | |
| Palabras Clave Informales: | degradation,dilute nitride, 4-junction solar cell, MOVPE, thermal load |
| Escuela: | Instituto de Energía Solar (IES) (UPM) |
| Departamento: | Electrónica Física |
| Grupo Investigación UPM: | Semiconductores III-V |
| Licencias Creative Commons: | Ninguna |
Resumen
A GaInP/Ga(In)As/GaNAsSb/Ge 4J solar cell grown using the combined MOVPE + MBE method is presented. This structure is used as a test bench to assess the effects caused by the integration of subcells and tunnel junctions into the full 4J structure. A significant degradation of the Ge bottom subcell emitter is observed during the growth of the GaNAsSb subcell, with a drop in the carrier collection efficiency at the high energy photon range that causes a ~15% lower Jsc and a Voc drop of ~50 mV at 1-sun. The Voc of the GaNAsSb subcell is shown to drop by as much as ~140 mV at 1-sun. No degradation in performance is observed in the tunnel junctions, and no further degradation is neither observed for the Ge subcell during the growth of the GaInP/Ga(In)As subcells. The hindered efficiency potential in this lattice-matched 4J architecture due to the degradation of the Ge and GaNAsSb subcells is discussed.
(C) John Wiley & Sons Ltd
Proyectos asociados
Tipo
Código
Acrónimo
Responsable
Título
FP7
607153
LONGESST
IQE plc
Low Cost Germanium Substrates for Next Generation 4-Junction Space Solar Cells Utilising Dilute Nitride Technology
Gobierno de España
TEC2014‐54260‐C3‐1‐P
Sin especificar
Sin especificar
Sin especificar
Gobierno de España
PCIN‐ 2015‐181‐C02‐02
Sin especificar
Sin especificar
Sin especificar
Gobierno de España
RYC‐2014‐15621
Sin especificar
Sin especificar
Sin especificar
Comunidad de Madrid
S2013/MAE‐2780
MADRID-PV
Sin especificar
Materiales, dispositivos y tecnología para el desarrollo de la industria fotovoltaica
Más información
| ID de Registro: | 47859 |
|---|---|
| Identificador DC: | https://oa.upm.es/47859/ |
| Identificador OAI: | oai:oa.upm.es:47859 |
| URL Portal Científico: | https://portalcientifico.upm.es/es/ipublic/item/3110728 |
| Identificador DOI: | 10.1002/pip.2930 |
| URL Oficial: | http://onlinelibrary.wiley.com/doi/10.1002/pip.293... |
| Depositado por: | Dr. Iván García Vara |
| Depositado el: | 26 Sep 2017 08:39 |
| Ultima Modificación: | 12 Nov 2025 00:00 |
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