Thin silicon solar cells: Pathway to cost-effective and defect-tolerant cell design

Augusto, André, Looney, Erin, Cañizo Nadal, Carlos del ORCID: https://orcid.org/0000-0003-1287-6854, Bowden, Stuart G. and Buonassisi, Tonio (2017). Thin silicon solar cells: Pathway to cost-effective and defect-tolerant cell design. "Energy Procedia" (n. 124); pp. 706-711. ISSN 1876-6102. https://doi.org/10.1016/j.egypro.2017.09.346.

Descripción

Título: Thin silicon solar cells: Pathway to cost-effective and defect-tolerant cell design
Autor/es:
Tipo de Documento: Artículo
Título de Revista/Publicación: Energy Procedia
Fecha: 2017
ISSN: 1876-6102
Número: 124
Materias:
ODS:
Palabras Clave Informales: Thin silicon, solar cells, defect, heterojunction
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

Texto completo

[thumbnail of INVE_MEM_2017_272602.pdf]
Vista Previa
PDF (Portable Document Format) - Se necesita un visor de ficheros PDF, como GSview, Xpdf o Adobe Acrobat Reader
Descargar (1MB) | Vista Previa

Resumen

Thinner silicon wafers are a pathway to lower cost without compromising the efficiency of solar cells. In this work, we study the recombination mechanism for thin and thick silicon heterojunction solar cells, and we discuss the potential of using more defective material to manufacture high performance thin solar cells. Modelling the performance of silicon heterojunction solar cells indicates that at open-circuit voltage the recombination is dominated by Auger and surface, representing nearly 90% of the total recombination. At maximum power point, the surface is responsible for 50 to 80% of the overall recombination, and its contribution increases inversely with the wafer thickness. The experimental results show that for lower quality CZ material with 1 ms bulk lifetime, 60 µm-thick cells perform better than 170 µm-thick cells. The potential efficiency gain is 1% absolute. The gains in voltage of using thinner wafers are significantly higher for the lower quality CZ material, 25 mV, than for standard CZ material, 10 mV.

Proyectos asociados

Tipo
Código
Acrónimo
Responsable
Título
Gobierno de España
ENE2014-56069-C4-2-R
TABACO project
Sin especificar
Sin especificar
Comunidad de Madrid
S2013/MAE-2780
MADRID-PV
Sin especificar
Sin especificar

Más información

ID de Registro: 50148
Identificador DC: https://oa.upm.es/50148/
Identificador OAI: oai:oa.upm.es:50148
Identificador DOI: 10.1016/j.egypro.2017.09.346
URL Oficial: https://www.sciencedirect.com/science/article/pii/...
Depositado por: Memoria Investigacion
Depositado el: 01 May 2018 14:26
Ultima Modificación: 30 Nov 2022 09:00