Modulation above pump beam energy in photoreflectance

Fuertes Marrón, David (2017). Modulation above pump beam energy in photoreflectance. "International Journal of Photoenergy", v. 2017 (n. 489412); pp. 1-5. ISSN 1110-662X.


Title: Modulation above pump beam energy in photoreflectance
  • Fuertes Marrón, David
Item Type: Article
Título de Revista/Publicación: International Journal of Photoenergy
Date: 9 July 2017
ISSN: 1110-662X
Volume: 2017
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Photoreflectance is used for the characterisation of semiconductor samples, usually by sweeping the monochromatized probe beam within the energy range comprised between the highest value set up by the pump beam and the lowest absorption threshold of the sample. There is, however, no fundamental upper limit for the probe beam other than the limited spectral content of the source and the responsivity of the detector. As long as the modulation mechanism behind photoreflectance does affect the complete electronic structure of the material under study, sweeping the probe beam towards higher energies from that of the pump source is equally effective in order to probe high-energy critical points. This fact, up to now largely overseen, is shown experimentally in this work. E1 and E0 + Δ0 critical points of bulk GaAs are unambiguously resolved using pump light of lower energy. This type of upstream modulation may widen further applications of the technique.

Funding Projects

Government of SpainTEC2015-64189-C3-1-RUnspecifiedUnspecifiedUnspecified
Madrid Regional GovernmentS2013/MAE-2780UnspecifiedUnspecifiedUnspecified

More information

Item ID: 50149
DC Identifier:
OAI Identifier:
DOI: 10.1155/2017/4894127
Official URL:
Deposited by: Memoria Investigacion
Deposited on: 01 May 2018 14:43
Last Modified: 25 Mar 2019 14:11
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