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Pindado Carrion, Santiago ORCID: https://orcid.org/0000-0003-2073-8275, Cubas Cano, Javier
ORCID: https://orcid.org/0000-0001-9787-3796, Roibás-Millán, Elena
ORCID: https://orcid.org/0000-0003-0180-6973, Bugallo Siegel, Francisco J. and Sorribes Palmer, Felix
ORCID: https://orcid.org/0000-0003-3442-0487
(2018).
Assessment of explicit models for different photovoltaic technologies.
"Energies", v. 11
(n. 6);
p. 1353.
ISSN 1996-1073.
https://doi.org/10.3390/en11061353.
Title: | Assessment of explicit models for different photovoltaic technologies |
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Author/s: |
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Item Type: | Article |
Título de Revista/Publicación: | Energies |
Date: | May 2018 |
ISSN: | 1996-1073 |
Volume: | 11 |
Subjects: | |
Freetext Keywords: | Solar cell; solar panel; photovoltaic modeling; explicit equation; parameter extraction; plastic solar cell. |
Faculty: | Instituto de Microgravedad Ignacio Da Riva (UPM) |
Department: | Sistemas Aeroespaciales, Transporte Aéreo y Aeropuertos |
UPM's Research Group: | Desarrollo y Ensayos Aeroespaciales DEA |
Creative Commons Licenses: | Recognition - No derivative works |
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Accurate and simple mathematical models are usually required to assess the performances of photovoltaic devices. In particular, it is common practice to use explicit models to evaluate the current–voltage (I–V) performance curves, mainly based on simple analytical expressions that enable the parameters determination with a little computational effort. Six different explicit photovoltaic models (i.e., explicit I–V equations) by different authors (Akbaba & Alattawi; El-Tayyan; Karmalkar & Haneefa; Das/Saetre et al.; Das; and Pindado & Cubas) are analyzed and compared. This comparison is carried out by fitting these models to eight I–V curves for different technologies, including Si, Si polycrystalline, Ga–As, and plastic solar cells. The accuracy of each model depends on the photovoltaic technology to which it is applied. The best fit to each I–V curve studied is normally obtained with a different model, with an average deviation under 2% in terms of short-circuit current (normalized RMSE). In general, the model proposed by Karmalkar & Haneefa shows the highest level of accuracy, and is a good fit for all I–V curves studied.
Item ID: | 51122 |
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DC Identifier: | https://oa.upm.es/51122/ |
OAI Identifier: | oai:oa.upm.es:51122 |
DOI: | 10.3390/en11061353 |
Official URL: | http://www.mdpi.com/1996-1073/11/6/1353 |
Deposited by: | Biblioteca ETSI Aeronauticos |
Deposited on: | 30 May 2018 12:17 |
Last Modified: | 07 Feb 2022 08:54 |