Assessment of explicit models for different photovoltaic technologies

Pindado Carrion, Santiago ORCID: https://orcid.org/0000-0003-2073-8275, Cubas Cano, Javier ORCID: https://orcid.org/0000-0001-9787-3796, Roibás Millán, Elena ORCID: https://orcid.org/0000-0003-0180-6973, Bugallo Siegel, Francisco J. and Sorribes Palmer, Felix ORCID: https://orcid.org/0000-0003-3442-0487 (2018). Assessment of explicit models for different photovoltaic technologies. "Energies", v. 11 (n. 6); p. 1353. ISSN 1996-1073. https://doi.org/10.3390/en11061353.

Descripción

Título: Assessment of explicit models for different photovoltaic technologies
Autor/es:
Tipo de Documento: Artículo
Título de Revista/Publicación: Energies
Fecha: Mayo 2018
ISSN: 1996-1073
Volumen: 11
Número: 6
Materias:
ODS:
Palabras Clave Informales: Solar cell; solar panel; photovoltaic modeling; explicit equation; parameter extraction; plastic solar cell.
Escuela: Instituto de Microgravedad Ignacio Da Riva (UPM)
Departamento: Sistemas Aeroespaciales, Transporte Aéreo y Aeropuertos
Grupo Investigación UPM: Desarrollo y Ensayos Aeroespaciales DEA
Licencias Creative Commons: Reconocimiento - Sin obra derivada

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Resumen

Accurate and simple mathematical models are usually required to assess the performances of photovoltaic devices. In particular, it is common practice to use explicit models to evaluate the current–voltage (I–V) performance curves, mainly based on simple analytical expressions that enable the parameters determination with a little computational effort. Six different explicit photovoltaic models (i.e., explicit I–V equations) by different authors (Akbaba & Alattawi; El-Tayyan; Karmalkar & Haneefa; Das/Saetre et al.; Das; and Pindado & Cubas) are analyzed and compared. This comparison is carried out by fitting these models to eight I–V curves for different technologies, including Si, Si polycrystalline, Ga–As, and plastic solar cells. The accuracy of each model depends on the photovoltaic technology to which it is applied. The best fit to each I–V curve studied is normally obtained with a different model, with an average deviation under 2% in terms of short-circuit current (normalized RMSE). In general, the model proposed by Karmalkar & Haneefa shows the highest level of accuracy, and is a good fit for all I–V curves studied.

Más información

ID de Registro: 51122
Identificador DC: https://oa.upm.es/51122/
Identificador OAI: oai:oa.upm.es:51122
URL Portal Científico: https://portalcientifico.upm.es/es/ipublic/item/5497090
Identificador DOI: 10.3390/en11061353
URL Oficial: http://www.mdpi.com/1996-1073/11/6/1353
Depositado por: Biblioteca ETSI Aeronauticos
Depositado el: 30 May 2018 12:17
Ultima Modificación: 12 Nov 2025 00:00