Study of the Reverse I-V in Component Subcells of III-V Multijunction Space Solar Cells

Martín, Pablo and González, José Ramón and García Vara, Iván and Algora Del Valle, Carlos and Rey-Stolle Prado, Ignacio (2021). Study of the Reverse I-V in Component Subcells of III-V Multijunction Space Solar Cells. "Progress in Photovoltaics: Research and Applications" ; ISSN 1099-159X. https://doi.org/10.1002/pip.3513.

Description

Title: Study of the Reverse I-V in Component Subcells of III-V Multijunction Space Solar Cells
Author/s:
  • Martín, Pablo
  • González, José Ramón
  • García Vara, Iván
  • Algora Del Valle, Carlos
  • Rey-Stolle Prado, Ignacio
Item Type: Article
Título de Revista/Publicación: Progress in Photovoltaics: Research and Applications
Date: 19 November 2021
ISSN: 1099-159X
Subjects:
Freetext Keywords: aerospace photovoltaics, electric breakdown, III–V semiconductors, reverse bias, triplejunction solar cells
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Ingeniería Energética
UPM's Research Group: Semiconductores III-V
Creative Commons Licenses: Recognition - Non commercial - Share

Full text

[img]
Preview
PDF - Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (547kB) | Preview
[img]
Preview
PDF - Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (244kB) | Preview

Abstract

The reverse bias operation of triple-junction solar cells (GaInP/Ga(In)As/Ge), typically used for space photovoltaics, is poorly understood. In this work, we conduct reverse bias stress tests on both isotype subcells (GaInP, Ga(In)As and Ge) as well as in the complete triple-junction solar cell. After each reverse bias step, forward dark and lighted I–Vs are measured and modelled using Shockley and Spirito and Albergamo models to fit the characteristic parameters of each individual subcell and quantify the variations evolution caused by the stress. The changes in these parameters are thoroughly analysed in order to comprehend the basic physical processes behind the degradation observed after the reverse bias is applied. Finally, we demonstrate that the individual parameters obtained from each subcell can be combined to simulate the final I–V curve of the complete triple junction and understand how it is affected when reverse bias is applied, linking the changes observed to a sudden degradation of the GaInP top subcell at low reverse voltages.

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainEQC2019-005701-PUnspecifiedUnspecifiedUnspecified
Government of SpainRTI2018-094291-B-I00VIGNEMALEUnspecifiedUnspecified

More information

Item ID: 69196
DC Identifier: https://oa.upm.es/69196/
OAI Identifier: oai:oa.upm.es:69196
DOI: 10.1002/pip.3513
Official URL: https://onlinelibrary.wiley.com/share/author/FBTHZCRQXUJMIF28NGUU?target=10.1002/pip.3513
Deposited by: Pablo Martín
Deposited on: 09 Dec 2021 10:28
Last Modified: 09 Dec 2021 10:28
  • Logo InvestigaM (UPM)
  • Logo GEOUP4
  • Logo Open Access
  • Open Access
  • Logo Sherpa/Romeo
    Check whether the anglo-saxon journal in which you have published an article allows you to also publish it under open access.
  • Logo Dulcinea
    Check whether the spanish journal in which you have published an article allows you to also publish it under open access.
  • Logo de Recolecta
  • Logo del Observatorio I+D+i UPM
  • Logo de OpenCourseWare UPM