High Power Wideband Class-E Power Amplifier

Ortega González, Francisco Javier (2010). High Power Wideband Class-E Power Amplifier. "IEEE Microwave and Wireless Components Letters", v. 20 (n. 10); pp. 569-571. ISSN 1531-1309. https://doi.org/10.1109/LMWC.2010.2064760.


Title: High Power Wideband Class-E Power Amplifier
  • Ortega González, Francisco Javier
Item Type: Article
Título de Revista/Publicación: IEEE Microwave and Wireless Components Letters
Date: October 2010
ISSN: 1531-1309
Volume: 20
Freetext Keywords: Aeronautical, broadband amplifiers, broadcasting, Class-E, EER, power amplifiers (PAs).
Faculty: E.U.I.T. Telecomunicación (UPM)
Department: Ingeniería Audiovisual y Comunicaciones
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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This letter shows a high-power, high-efficiency, wideband Class-E RF power amplifier designed upon the load admittance synthesis concept and built using an uncomplicated low-loss load network with a low loss wideband admittance transformer as the main component. It uses a power Silicon LDMOS transistor to provide up to 145 W at 28 V peak power, up to 86% drain efficiency over 35% fractional bandwidth (from 85 to 120 MHz) and 15.6 dB gain at peak power without any adjustments. These are clear performance advantages over previous published works and commercially available amplifiers at a similar frequency band and power level. The amplifier applications include FM broadcast, aeronautical communications, nuclear, MRI, heating or RF power stage for Envelope Elimination and Restoration transmitters.

More information

Item ID: 6924
DC Identifier: https://oa.upm.es/6924/
OAI Identifier: oai:oa.upm.es:6924
DOI: 10.1109/LMWC.2010.2064760
Official URL: http://www.ieee.org
Deposited by: Memoria Investigacion
Deposited on: 11 May 2011 10:12
Last Modified: 20 Apr 2016 16:02
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