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Growth of non-polar m-plane GaN pseudo-substrates by Molecular beam epitaxy
Cita
Fernando Saavedra, Amalia Luisa 
ORCID: https://orcid.org/0000-0002-5716-2591, Albert, Steven, Bengoechea Encabo, Ana, Trampert, Achim, Xie, Mengyao, Sánchez García, Miguel Ángel ORCID: https://orcid.org/0000-0002-1494-9351 and Calleja Pardo, Enrique ORCID: https://orcid.org/0000-0002-3686-8982
(2023).
Growth of non-polar m-plane GaN pseudo-substrates by Molecular beam epitaxy.
"Journal of Crystal Growth", v. 617
;
p. 127272.
ISSN 1873-5002.
https://doi.org/10.1016/j.jcrysgro.2023.127272.
ORCID: https://orcid.org/0000-0002-5716-2591, Albert, Steven, Bengoechea Encabo, Ana, Trampert, Achim, Xie, Mengyao, Sánchez García, Miguel Ángel ORCID: https://orcid.org/0000-0002-1494-9351 and Calleja Pardo, Enrique ORCID: https://orcid.org/0000-0002-3686-8982
(2023).
Growth of non-polar m-plane GaN pseudo-substrates by Molecular beam epitaxy.
"Journal of Crystal Growth", v. 617
;
p. 127272.
ISSN 1873-5002.
https://doi.org/10.1016/j.jcrysgro.2023.127272.
Descripción
| Título: | Growth of non-polar m-plane GaN pseudo-substrates by Molecular beam epitaxy |
|---|---|
| Autor/es: |
|
| Tipo de Documento: | Artículo |
| Título de Revista/Publicación: | Journal of Crystal Growth |
| Fecha: | 1 Septiembre 2023 |
| ISSN: | 1873-5002 |
| Volumen: | 617 |
| Materias: | |
| Palabras Clave Informales: | A1.Etching A3.Molecular beam epitaxy A3.Selective epitaxy B1.Nitrides B2.Semiconducting III-V materials |
| Escuela: | E.T.S.I. Diseño Industrial (UPM) |
| Departamento: | Ingeniería Eléctrica, Electrónica Automática y Física Aplicada |
| Licencias Creative Commons: | Reconocimiento - Sin obra derivada - No comercial |
Resumen
Non-polar m-plane GaN films were grown by Plasma Assisted Molecular Beam Epitaxy on γ-LiAlO2 (1 0 0) substrates by a controlled coalescence of GaN nanocolumns obtained by a two-step process including a top-down nanopillars etching from a GaN buffer and a subsequent bottom-up overgrowth. Transmission electron microscopy data show a significant reduction of extended defects density in the coalesced film as compared to the initial GaN buffer, most likely due to a filter effect by the regrowth process on the nanopillars inclined walls. Low temperature photoluminescence spectra back this reduction by a strong intensity decrease of the stacking faults fingerprint emission peaks, while a very intense donor-bound excitonic emission at 3.472 eV, 2.8 meV wide, becomes dominant.
Más información
| ID de Registro: | 85781 |
|---|---|
| Identificador DC: | https://oa.upm.es/85781/ |
| Identificador OAI: | oai:oa.upm.es:85781 |
| URL Portal Científico: | https://portalcientifico.upm.es/es/ipublic/item/10083421 |
| Identificador DOI: | 10.1016/j.jcrysgro.2023.127272 |
| URL Oficial: | https://www.sciencedirect.com/science/article/pii/... |
| Depositado por: | iMarina Portal Científico |
| Depositado el: | 09 Ene 2025 09:34 |
| Ultima Modificación: | 09 Ene 2025 09:34 |
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