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Manufacturing process for III-V multijunction solar cells on germanium substrates with a total thickness below 60 microns
Cita
Lombardero Hernández, Iván 
ORCID: https://orcid.org/0000-0002-3157-1004, Cifuentes Baro, Luis, Gabás Pérez, María Mercedes ORCID: https://orcid.org/0000-0002-9626-6131 and Algora del Valle, Carlos ORCID: https://orcid.org/0000-0003-1872-7243
(2022).
Manufacturing process for III-V multijunction solar cells on germanium substrates with a total thickness below 60 microns.
"Progress in Photovoltaics", v. 30
(n. 7);
pp. 740-749.
ISSN 10627995.
https://doi.org/10.1002/pip.3547.
ORCID: https://orcid.org/0000-0002-3157-1004, Cifuentes Baro, Luis, Gabás Pérez, María Mercedes ORCID: https://orcid.org/0000-0002-9626-6131 and Algora del Valle, Carlos ORCID: https://orcid.org/0000-0003-1872-7243
(2022).
Manufacturing process for III-V multijunction solar cells on germanium substrates with a total thickness below 60 microns.
"Progress in Photovoltaics", v. 30
(n. 7);
pp. 740-749.
ISSN 10627995.
https://doi.org/10.1002/pip.3547.
Descripción
| Título: | Manufacturing process for III-V multijunction solar cells on germanium substrates with a total thickness below 60 microns |
|---|---|
| Autor/es: |
|
| Tipo de Documento: | Artículo |
| Título de Revista/Publicación: | Progress in Photovoltaics |
| Fecha: | 1 Julio 2022 |
| ISSN: | 10627995 |
| Volumen: | 30 |
| Número: | 7 |
| Materias: | |
| ODS: | |
| Palabras Clave Informales: | Degradation; Ge; Germanium; Growth; III-V solar cells; III–V solar cells; REMOVAL; SI; space solar cells; SUBCELLS; thin solar cells; Tunnel-Junctions |
| Escuela: | E.T.S.I. Telecomunicación (UPM) |
| Departamento: | Electrónica Física, Ingeniería Eléctrica y Física Aplicada |
| Licencias Creative Commons: | Ninguna |
Resumen
In this work, we demonstrate a new manufacturing process that allows to fabricate thin solar cells avoiding problems related to the brittleness or fragility of thin wafers without needing any carrier nor temporary substrate. This technique has been successfully applied to Ge single and GaInP/Ga(In)As/Ge triple-junction solar cells grown on Ge substrates, achieving 47.5- and 55.5-mu m-thick substrates, respectively. Although this technique should allow to thin substrates to any desired thickness, a final thickness around 20-30 mu m is recommended due to practical concerns such as the uneven substrate thickness throughout the wafer. In any case, a III-V solar cell with such a thickness should be thin enough for most applications and, in particular, for space ones.
Proyectos asociados
Tipo
Código
Acrónimo
Responsable
Título
Gobierno de España
EQC2019-005701-P
Sin especificar
Sin especificar
Sin especificar
Gobierno de España
PID2020-112763RB-I00
Sin especificar
Sin especificar
Sin especificar
Más información
| ID de Registro: | 91353 |
|---|---|
| Identificador DC: | https://oa.upm.es/91353/ |
| Identificador OAI: | oai:oa.upm.es:91353 |
| URL Portal Científico: | https://portalcientifico.upm.es/es/ipublic/item/9887738 |
| Identificador DOI: | 10.1002/pip.3547 |
| URL Oficial: | https://onlinelibrary.wiley.com/doi/10.1002/pip.35... |
| Depositado por: | iMarina Portal Científico |
| Depositado el: | 22 Oct 2025 09:36 |
| Ultima Modificación: | 22 Oct 2025 09:36 |
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