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ORCID: https://orcid.org/0000-0003-1872-7243, Rey-Stolle Prado, Ignacio
ORCID: https://orcid.org/0000-0002-4919-5609, García Vara, Iván
ORCID: https://orcid.org/0000-0002-9895-2020 and Ramos-Barrado, J.R.
(2012).
Analysis of the surface state of epi-ready Ge wafers.
"Applied Surface Science", v. 258
(n. 20);
pp. 8166-8170.
ISSN 0169-4332.
https://doi.org/10.1016/j.apsusc.2012.05.015.
| Título: | Analysis of the surface state of epi-ready Ge wafers |
|---|---|
| Autor/es: |
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| Tipo de Documento: | Artículo |
| Título de Revista/Publicación: | Applied Surface Science |
| Fecha: | Agosto 2012 |
| ISSN: | 0169-4332 |
| Volumen: | 258 |
| Número: | 20 |
| Materias: | |
| ODS: | |
| Palabras Clave Informales: | Germanium wafers; III–V solar cells; Photoelectron spectroscopy |
| Escuela: | Instituto de Energía Solar (IES) (UPM) |
| Departamento: | Electrónica Física |
| Licencias Creative Commons: | Reconocimiento - Sin obra derivada - No comercial |
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The surface state of Ge epi-ready wafers (such as those used on III-V multijunction solar cells) supplied by two different vendors has been studied using X-ray photoemission spectroscopy. Our experimental results show that the oxide layer on the wafer surface is formed by GeO and GeO2. This oxide layer thickness differs among wafers coming from different suppliers. Besides, several contaminants appear on the wafer surfaces, carbon and probably chlorine being common to every wafer, irrespective of its origin. Wafers from one of the vendors show the presence of carbonates at their surfaces. On such wafers, traces of potassium seem to be present too.
| ID de Registro: | 16223 |
|---|---|
| Identificador DC: | https://oa.upm.es/16223/ |
| Identificador OAI: | oai:oa.upm.es:16223 |
| URL Portal Científico: | https://portalcientifico.upm.es/es/ipublic/item/3110623 |
| Identificador DOI: | 10.1016/j.apsusc.2012.05.015 |
| URL Oficial: | http://www.sciencedirect.com/science/article/pii/S... |
| Depositado por: | Memoria Investigacion |
| Depositado el: | 28 Jul 2013 08:08 |
| Ultima Modificación: | 25 Mar 2026 08:53 |
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