Analysis of the surface state of epi-ready Ge wafers

Gabás, M. and Palanco, S. and Bijani, S. and Barrigón Montañés, Enrique and Algora del Valle, Carlos and Rey-Stolle Prado, Ignacio and García Vara, Iván and Ramos-Barrado, J.R. (2012). Analysis of the surface state of epi-ready Ge wafers. "Applied Surface Science", v. 258 (n. 20); pp. 8166-8170. ISSN 0169-4332. https://doi.org/10.1016/j.apsusc.2012.05.015.

Description

Title: Analysis of the surface state of epi-ready Ge wafers
Author/s:
  • Gabás, M.
  • Palanco, S.
  • Bijani, S.
  • Barrigón Montañés, Enrique
  • Algora del Valle, Carlos
  • Rey-Stolle Prado, Ignacio
  • García Vara, Iván
  • Ramos-Barrado, J.R.
Item Type: Article
Título de Revista/Publicación: Applied Surface Science
Date: August 2012
ISSN: 0169-4332
Volume: 258
Subjects:
Freetext Keywords: Germanium wafers; III–V solar cells; Photoelectron spectroscopy
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The surface state of Ge epi-ready wafers (such as those used on III-V multijunction solar cells) supplied by two different vendors has been studied using X-ray photoemission spectroscopy. Our experimental results show that the oxide layer on the wafer surface is formed by GeO and GeO2. This oxide layer thickness differs among wafers coming from different suppliers. Besides, several contaminants appear on the wafer surfaces, carbon and probably chlorine being common to every wafer, irrespective of its origin. Wafers from one of the vendors show the presence of carbonates at their surfaces. On such wafers, traces of potassium seem to be present too.

More information

Item ID: 16223
DC Identifier: http://oa.upm.es/16223/
OAI Identifier: oai:oa.upm.es:16223
DOI: 10.1016/j.apsusc.2012.05.015
Official URL: http://www.sciencedirect.com/science/article/pii/S0169433212008604
Deposited by: Memoria Investigacion
Deposited on: 28 Jul 2013 08:08
Last Modified: 21 Apr 2016 16:32
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