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Optimization of AlN thin layers on diamond substrates for high frequency SAW resonators
Cita
Rodriguez Madrid, Juan, Fuentes Iriarte, Gonzalo 
ORCID: https://orcid.org/0000-0003-3803-6474, Araujo, Daniel, Villar, María Del Pilar, Williams, Oliver A., Müller Sebert, W. and Calle Gómez, Fernando ORCID: https://orcid.org/0000-0001-7869-6704
(2012).
Optimization of AlN thin layers on diamond substrates for high frequency SAW resonators.
"Materials letters", v. 66
(n. 1);
pp. 339-342.
ISSN 0167-577X.
https://doi.org/10.1016/j.matlet.2011.09.003.
ORCID: https://orcid.org/0000-0003-3803-6474, Araujo, Daniel, Villar, María Del Pilar, Williams, Oliver A., Müller Sebert, W. and Calle Gómez, Fernando ORCID: https://orcid.org/0000-0001-7869-6704
(2012).
Optimization of AlN thin layers on diamond substrates for high frequency SAW resonators.
"Materials letters", v. 66
(n. 1);
pp. 339-342.
ISSN 0167-577X.
https://doi.org/10.1016/j.matlet.2011.09.003.
Descripción
| Título: | Optimization of AlN thin layers on diamond substrates for high frequency SAW resonators |
|---|---|
| Autor/es: |
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| Tipo de Documento: | Artículo |
| Título de Revista/Publicación: | Materials letters |
| Fecha: | Enero 2012 |
| ISSN: | 0167-577X |
| Volumen: | 66 |
| Número: | 1 |
| Materias: | |
| ODS: | |
| Palabras Clave Informales: | Diamond; AlN sputtering; High frequency; SAW resonators |
| Escuela: | E.T.S.I. Telecomunicación (UPM) |
| Departamento: | Ingeniería Electrónica |
| Licencias Creative Commons: | Reconocimiento - Sin obra derivada - No comercial |
Resumen
AlN/diamond heterostructures are very promising for high frequency surface acoustic wave (SAW) resonators. In their design, the thickness of the piezoelectric film is one of the key parameters. On the other hand, the film material quality and, hence, the device performance, also depend on that thickness. In this work, polished microcrystalline diamond substrates have been used to deposit AlN films by reactive sputtering, from 150 nm up to 3 μm thick. A high degree of the c-axis orientation has been obtained in all cases. SAW one port resonators at high frequency have been fabricated on these films with a proper combination of the film thickness and transducer size.
Más información
| ID de Registro: | 22295 |
|---|---|
| Identificador DC: | https://oa.upm.es/22295/ |
| Identificador OAI: | oai:oa.upm.es:22295 |
| URL Portal Científico: | https://portalcientifico.upm.es/es/ipublic/item/5486888 |
| Identificador DOI: | 10.1016/j.matlet.2011.09.003 |
| URL Oficial: | http://www.sciencedirect.com/science/article/pii/S... |
| Depositado por: | Memoria Investigacion |
| Depositado el: | 09 Feb 2014 09:09 |
| Ultima Modificación: | 12 Nov 2025 00:00 |
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